KMB054N40IA - KEC

KMB054N40IA N-Channel Trench MOSFET

This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for Back-light Inverter and Power Supply. FEATURES VDSS=40V, ID=54A. Low Drain-Source ON Resistance. : RDS(ON)=8.5m (Max.) @ VGS=10V : RDS(ON)=11m (Max.) @ VGS=4.5V Super High Dense Ce.

Features

VDSS=40V, ID=54A. Low Drain-Source ON Resistance. : RDS(ON)=8.5m (Max.) @ VGS=10V : RDS(ON)=11m (Max.) @ VGS=4.5V Super High Dense Cell Design. High Power and Current Handling Capability. MAXIMUM RATING (Ta=25 Unless otherwise Noted) CHARACTERISTIC SYMBOL N-Ch UNIT Drain-Source Voltage Gate-Source Voltage Drain Current DC@TC=25 Pulsed Drain-Source-Diode Forward Current @TC=25 Drain Power Dissipation @Ta=25 (Note1) (Note2) (Note1) (Note2) VDSS VGSS ID IDP IS PD 40 V 20 V 54 A 100 100 A 45 W 3.1 Maximum Junction Temperature Tj Storage Temperature Range Tstg Thermal Resistance, J.