KMB054N45DA - KEC

KMB054N45DA N-Channel Trench MOSFET

This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for Back-light Inverter and Power Supply. FEATURES VDSS=45V, ID=54A. Low Drain-Source ON Resistance. : RDS(ON)=8.5m (Max.) @ VGS=10V : RDS(ON)=11m (Max.) @ VGS=4.5V Super High Dense Cell.

Features

VDSS=45V, ID=54A. Low Drain-Source ON Resistance. : RDS(ON)=8.5m (Max.) @ VGS=10V : RDS(ON)=11m (Max.) @ VGS=4.5V Super High Dense Cell Design. High Power and Current Handling Capability. A CD B H G FF J E K L N M DIM MILLIMETERS A 6.60 +_ 0.20 B 6.10 +_0.20 C 5.34 +_ 0.30 D 0.70 +_0.20 E 2.70 +_ 0.15 F 2.30 +_ 0.10 G 0.96 MAX H 0.90 MAX J 1.80 +_0.20 K 2.30 +_0.10 L 0.50 +_ 0.10 M 0.50 +_0.10 N 0.70 MIN 123 1. GATE 2. DRAIN 3. SOURCE MAXIMUM RATING (Ta=25 Unless otherwise Noted) CHARACTERISTIC SYMBOL N-Ch UNIT Drain-Source Voltage VDSS Gate-Source Voltage VGSS Drain Current D.