KMB010P30QA - KEC

KMB010P30QA P-Channel Trench MOSFET

This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristiscs. It is mainly suitable for Battery pack. FEATURES VDSS=-30V, ID=-10A. Drain-Source ON Resistance. RDS(ON)=20m (Max.) @ VGS=-10V RDS(ON)=28m (Max.) @ VGS=-4.5V Super High Dense Cell Design MOSFET Maximum Rat.

Features

VDSS=-30V, ID=-10A. Drain-Source ON Resistance. RDS(ON)=20m (Max.) @ VGS=-10V RDS(ON)=28m (Max.) @ VGS=-4.5V Super High Dense Cell Design MOSFET Maximum Ratings (Ta=25 Unless otherwise noted) CHARACTERISTIC SYMBOL RATING UNIT Drain Source Voltage Gate Source Voltage Drain Current VDSS -30 V VGSS 20 V DC ID
* -10 A Pulsed IDP -80 A Drain Source Diode Forward Current IS -1.7 A Drain Power Dissipation PD
* 2.0 W Maximum Junction Temperature Storage Temperature Range Tj 150 Tstg -55~150 Thermal Resistance, Junction to Ambient Note :
*Surface Mounted on FR4 Board RthJA
* 62.5 /.