Switching regulator and DC-DC Converter applications. It s mainly suitable for power management in PC, portable equipment and battery powered systems. FEATURES VDSS=30V, ID=30A. Low Drain-Source ON Resistance. : RDS(ON)=18m (Max.) @ VGS=10V : RDS(ON)=36m (Max.) @ VGS=4.5V Super High Dense Cell Design. High Power and Current Handling Capability. A C M G FF .
VDSS=30V, ID=30A. Low Drain-Source ON Resistance. : RDS(ON)=18m (Max.) @ VGS=10V : RDS(ON)=36m (Max.) @ VGS=4.5V Super High Dense Cell Design. High Power and Current Handling Capability.
A C
M G
FF
H DIM MILLIMETERS
D
J A 6.6 +_ 0.2
B 6.1+_ 0.2
C 5.33 +_ 0.1
D 1.08+_ 0.2
B E 2.92 +_ 0.3 F 2.28+_ 0.1
G 1.1 MAX
H 2.3 +_ 0.1
E K
J 0.51+_ 0.1 N K 1.01+_ 0.1
L 0.51+_ 0.1 M 0.8 +_ 0.1
L N 1.5+_ 0.2
123
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING UNIT
Drain-Source Voltage
VDSS
Gate-Source Voltage
VGSS
Drain Current
DC Pulsed (Note 1)
ID
* IDP
*
Source-Drain Diode Cur.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | KMB035N40DB |
KEC |
N-Channel Trench MOSFET | |
2 | KMB035N40DC |
KEC |
N-Channel Trench MOSFET | |
3 | KMB010P30QA |
KEC |
P-Channel Trench MOSFET | |
4 | KMB012N30QA |
KEC |
N-Channel Trench MOSFET | |
5 | KMB014P30QA |
KEC |
Trench MOSFET | |
6 | KMB050N60P |
KEC |
N-Channel MOSFET | |
7 | KMB050N60PA |
KEC |
N CHANNEL MOS FIELD EFFECT TRANSISTOR | |
8 | KMB054N40DA |
KEC |
N-Channel Trench MOSFET | |
9 | KMB054N40DB |
KEC |
N-Channel Trench MOSFET | |
10 | KMB054N40DC |
KEC |
N-Channel Trench MOSFET | |
11 | KMB054N40IA |
KEC |
N-Channel Trench MOSFET | |
12 | KMB054N45DA |
KEC |
N-Channel Trench MOSFET |