This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction , electronic lamp ballasts based on half bridge topology and switching mode power supplies. FEATURES VDSS= 60V, ID= 50A Drain-Source ON Resista.
VDSS= 60V, ID= 50A Drain-Source ON Resistance : RDS(ON)=0.022 @VGS = 10V Qg(typ.) = 32nC Improved dv/dt capacity, high Ruggedness Maximum Junction Temperature Range (175 ) KMB050N60P N CHANNEL MOS FIELD EFFECT TRANSISTOR A E I K M D NN F G B Q L J O C P H 123 1. GATE 2. DRAIN 3. SOURCE DIM A B C D E F G H I J K L M N O P Q MILLIMETERS 9.9 +_ 0.2 15.95 MAX 1.3+0.1/-0.05 0.8+_ 0.1 3.6 +_ 0.2 2.8+_ 0.1 3.7 0.5+0.1/-0.05 1.5 13.08+_ 0.3 1.46 1.4 +_ 0.1 1.27+_ 0.1 2.54 +_ 0.2 4.5 +_ 0.2 2.4 +_ 0.2 9.2 +_ 0.2 MAXIMUM RATING (Tc=25 ) CHARACTERISTIC SYMBOL Drain-Source Voltage Gate-Sourc.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | KMB050N60PA |
KEC |
N CHANNEL MOS FIELD EFFECT TRANSISTOR | |
2 | KMB054N40DA |
KEC |
N-Channel Trench MOSFET | |
3 | KMB054N40DB |
KEC |
N-Channel Trench MOSFET | |
4 | KMB054N40DC |
KEC |
N-Channel Trench MOSFET | |
5 | KMB054N40IA |
KEC |
N-Channel Trench MOSFET | |
6 | KMB054N45DA |
KEC |
N-Channel Trench MOSFET | |
7 | KMB010P30QA |
KEC |
P-Channel Trench MOSFET | |
8 | KMB012N30QA |
KEC |
N-Channel Trench MOSFET | |
9 | KMB014P30QA |
KEC |
Trench MOSFET | |
10 | KMB030N30D |
KEC |
N-Channel Trench MOSFET | |
11 | KMB035N40DB |
KEC |
N-Channel Trench MOSFET | |
12 | KMB035N40DC |
KEC |
N-Channel Trench MOSFET |