KMB054N40IA |
Part Number | KMB054N40IA |
Manufacturer | KEC |
Description | This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for Back-light Inverter a... |
Features |
VDSS=40V, ID=54A. Low Drain-Source ON Resistance. : RDS(ON)=8.5m (Max.) @ VGS=10V : RDS(ON)=11m (Max.) @ VGS=4.5V Super High Dense Cell Design. High Power and Current Handling Capability.
MAXIMUM RATING (Ta=25 Unless otherwise Noted)
CHARACTERISTIC
SYMBOL N-Ch UNIT
Drain-Source Voltage
Gate-Source Voltage
Drain Current
DC@TC=25 Pulsed
Drain-Source-Diode Forward Current
@TC=25 Drain Power Dissipation
@Ta=25
(Note1) (Note2)
(Note1) (Note2)
VDSS VGSS
ID IDP IS
PD
40 V
20 V
54 A
100
100 A
45 W
3.1
Maximum Junction Temperature
Tj
Storage Temperature Range
Tstg
Thermal Resistance, J... |
Document |
KMB054N40IA Data Sheet
PDF 53.23KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | KMB054N40DA |
KEC |
N-Channel Trench MOSFET | |
2 | KMB054N40DB |
KEC |
N-Channel Trench MOSFET | |
3 | KMB054N40DC |
KEC |
N-Channel Trench MOSFET | |
4 | KMB054N45DA |
KEC |
N-Channel Trench MOSFET | |
5 | KMB050N60P |
KEC |
N-Channel MOSFET |