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KMB010P30QA |
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| Part Number | KMB010P30QA |
| Manufacturer | KEC |
| Description | This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristiscs. It is mainly suitable for Battery pack. FEATUR... |
| Features |
VDSS=-30V, ID=-10A. Drain-Source ON Resistance. RDS(ON)=20m (Max.) @ VGS=-10V RDS(ON)=28m (Max.) @ VGS=-4.5V Super High Dense Cell Design
MOSFET Maximum Ratings (Ta=25 Unless otherwise noted)
CHARACTERISTIC
SYMBOL RATING UNIT
Drain Source Voltage Gate Source Voltage
Drain Current
VDSS
-30
V
VGSS
20 V
DC ID* -10 A
Pulsed
IDP
-80
A
Drain Source Diode Forward Current
IS -1.7 A
Drain Power Dissipation
PD* 2.0 W
Maximum Junction Temperature Storage Temperature Range
Tj 150 Tstg -55~150
Thermal Resistance, Junction to Ambient Note : *Surface Mounted on FR4 Board
RthJA*
62.5
/... |
| Document |
 KMB010P30QA Data Sheet
PDF 734.05KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | KMB012N30QA |
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| 2 | KMB014P30QA |
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| 4 | KMB035N40DB |
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| 5 | KMB035N40DC |
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