K6F2016V4D Family CMOS SRAM Document Title 128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History 0.0 Initial Draft 1.0 Finalized - Change for tWP : 55 to 50ns for 70ns product - Change for tWHZ : 25 to 20ns for 70ns product - Change for tDW : 20 to 25ns for 55ns product Draft Date January 6, 2000 May 4, 2.
• Process Technology: Full CMOS
• Organization: 128K x16 bit
• Power Supply Voltage: 3.0~3.6V
• Low Data Retention Voltage: 1.5V(Min)
• Three state output status and TTL Compati.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | K6F2016U4E |
Samsung semiconductor |
128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM | |
2 | K6F2016U4E-F |
Samsung semiconductor |
128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM | |
3 | K6F2016U4G |
Samsung semiconductor |
2Mb(128K x 16 bit) Low Power SRAM | |
4 | K6F2008T2E |
Samsung semiconductor |
256K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM | |
5 | K6F2008U2E-YF55 |
Samsung semiconductor |
256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM | |
6 | K6F2008U2E-YF70 |
Samsung semiconductor |
256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM | |
7 | K6F2008V2E |
Samsung semiconductor |
256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM | |
8 | K6F2008V2E-LF55 |
Samsung semiconductor |
256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM | |
9 | K6F2008V2E-LF70 |
Samsung semiconductor |
256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM | |
10 | K6F2008V2E-YF55 |
Samsung semiconductor |
256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM | |
11 | K6F2008V2E-YF70 |
Samsung semiconductor |
256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM | |
12 | K6F1008R2M |
Samsung Electronics |
SRAM |