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K6F2016V4D |
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| Part Number | K6F2016V4D |
| Manufacturer | Samsung semiconductor |
| Description | K6F2016V4D Family CMOS SRAM Document Title 128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History 0.0 Initial Draft 1.0 Finalized - Change for tWP :... |
| Features |
• Process Technology: Full CMOS • Organization: 128K x16 bit • Power Supply Voltage: 3.0~3.6V • Low Data Retention Voltage: 1.5V(Min) • Three state output status and TTL Compati... |
| Document |
 K6F2016V4D Data Sheet
PDF 105.57KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | K6F2016U4E |
Samsung semiconductor |
128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
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| 2 | K6F2016U4E-F |
Samsung semiconductor |
128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
|
| 3 | K6F2016U4G |
Samsung semiconductor |
2Mb(128K x 16 bit) Low Power SRAM |
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| 4 | K6F2008T2E |
Samsung semiconductor |
256K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM |
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| 5 | K6F2008U2E-YF55 |
Samsung semiconductor |
256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM |
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