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K6F2016U4G - Samsung semiconductor

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K6F2016U4G 2Mb(128K x 16 bit) Low Power SRAM

The K6F2016U4G families are fabricated by SAMSUNG′s advanced full CMOS process technology. The families support industrial temperature range and 48 ball Chip Scale Package for user flexibility of system design. The family also supports low data retention voltage for battery back-up operation with low data retention current. www.DataSheet4U.com 128K x 16 bi.

Features







• Preliminary CMOS SRAM GENERAL DESCRIPTION The K6F2016U4G families are fabricated by SAMSUNG′s advanced full CMOS process technology. The families support industrial temperature range and 48 ball Chip Scale Package for user flexibility of system design. The family also supports low data retention voltage for battery back-up operation with low data retention current. www.DataSheet4U.com 128K x 16 bit Super Low Power and Low Voltage Full CMOS Static RAM Process Technology: Full CMOS Organization: 128K x16 bit Power Supply Voltage: 2.7~3.3V Low Data Retention Voltage: 1.5V(Min) Thre.

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