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The K6F2008U2E families are fabricated by SAMSUNG′s advanced Full CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also supports low data retention voltage for battery back-up operation with low data retention current. PRODUCT FAMILY Power Di.
• Process Technology: Full CMOS
• Organization: 256Kx8
• Power Supply Voltage: 2.7~3.3V
• Low Data Retention Voltage: 1.5V(Min)
• Three State Outputs
• Package Type: 32-TSOP1-0813.4F
CMOS SRAM
GENERAL DESCRIPTION
The K6F2008U2E families are fabricated by SAMSUNG′s advanced Full CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also supports low data retention voltage for battery back-up operation with low data retention current.
PRODUCT FAMILY
Power Dissipation Product Family .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | K6F2008U2E-YF55 |
Samsung semiconductor |
256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM |
|
| 2 | K6F2008T2E |
Samsung semiconductor |
256K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM |
|
| 3 | K6F2008V2E |
Samsung semiconductor |
256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM |
|
| 4 | K6F2008V2E-LF55 |
Samsung semiconductor |
256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM |
|
| 5 | K6F2008V2E-LF70 |
Samsung semiconductor |
256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM |
|
| 6 | K6F2008V2E-YF55 |
Samsung semiconductor |
256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM |
|
| 7 | K6F2008V2E-YF70 |
Samsung semiconductor |
256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM |
|
| 8 | K6F2016U4E |
Samsung semiconductor |
128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
|
| 9 | K6F2016U4E-F |
Samsung semiconductor |
128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
|
| 10 | K6F2016U4G |
Samsung semiconductor |
2Mb(128K x 16 bit) Low Power SRAM |
|
| 11 | K6F2016V4D |
Samsung semiconductor |
CMOS SRAM |
|
| 12 | K6F1008R2M |
Samsung Electronics |
SRAM |
|