The K6F2008T2E families are fabricated by SAMSUNG′s advanced Full CMOS process technology. The families support industrial temperature ranges for user flexibility of system design. The families also supports low data retention voltage for battery back-up operation with low data retention current. PRODUCT FAMILY Power Dissipation Product Family Operating Tem.
• Process Technology: Full CMOS
• Organization: 256Kx8
• Power Supply Voltage: 2.7 ~ 3.6V
• Low Data Retention Voltage: 1.5V(Min)
• Three State Outputs
• Package Type: 32-TSOP1-0813.4F
Preliminary CMOS SRAM www.DataSheet4U.com
GENERAL DESCRIPTION
The K6F2008T2E families are fabricated by SAMSUNG′s advanced Full CMOS process technology. The families support industrial temperature ranges for user flexibility of system design. The families also supports low data retention voltage for battery back-up operation with low data retention current.
PRODUCT FAMILY
Power Dissipation Product Family Opera.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | K6F2008U2E-YF55 |
Samsung semiconductor |
256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM | |
2 | K6F2008U2E-YF70 |
Samsung semiconductor |
256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM | |
3 | K6F2008V2E |
Samsung semiconductor |
256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM | |
4 | K6F2008V2E-LF55 |
Samsung semiconductor |
256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM | |
5 | K6F2008V2E-LF70 |
Samsung semiconductor |
256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM | |
6 | K6F2008V2E-YF55 |
Samsung semiconductor |
256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM | |
7 | K6F2008V2E-YF70 |
Samsung semiconductor |
256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM | |
8 | K6F2016U4E |
Samsung semiconductor |
128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM | |
9 | K6F2016U4E-F |
Samsung semiconductor |
128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM | |
10 | K6F2016U4G |
Samsung semiconductor |
2Mb(128K x 16 bit) Low Power SRAM | |
11 | K6F2016V4D |
Samsung semiconductor |
CMOS SRAM | |
12 | K6F1008R2M |
Samsung Electronics |
SRAM |