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K6F2016U4E - Samsung semiconductor

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K6F2016U4E 128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM

The K6F2016U4E families are fabricated by SAMSUNG′s advanced full CMOS process technology. The families support industrial temperature range and 48 ball Chip Scale Package for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with low data retention current. 128K x 16 bit Super Low Power an.

Features







• CMOS SRAM GENERAL DESCRIPTION The K6F2016U4E families are fabricated by SAMSUNG′s advanced full CMOS process technology. The families support industrial temperature range and 48 ball Chip Scale Package for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with low data retention current. 128K x 16 bit Super Low Power and Low Voltage Full CMOS Static RAM Process Technology: Full CMOS Organization: 128K x16 bit Power Supply Voltage: 2.7~3.3V Low Data Retention Voltage: 1.5V(Min) Three State Outputs Package Type: 48.

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