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K6F2008T2E |
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| Part Number | K6F2008T2E |
| Manufacturer | Samsung semiconductor |
| Description | The K6F2008T2E families are fabricated by SAMSUNG′s advanced Full CMOS process technology. The families support industrial temperature ranges for user flexibility of system design. The families also s... |
| Features |
• Process Technology: Full CMOS • Organization: 256Kx8 • Power Supply Voltage: 2.7 ~ 3.6V • Low Data Retention Voltage: 1.5V(Min) • Three State Outputs • Package Type: 32-TSOP1-0813.4F Preliminary CMOS SRAM www.DataSheet4U.com GENERAL DESCRIPTION The K6F2008T2E families are fabricated by SAMSUNG′s advanced Full CMOS process technology. The families support industrial temperature ranges for user flexibility of system design. The families also supports low data retention voltage for battery back-up operation with low data retention current. PRODUCT FAMILY Power Dissipation Product Family Opera... |
| Document |
 K6F2008T2E Data Sheet
PDF 128.30KB |
| Distributor | Stock | Price | Buy |
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | K6F2008U2E-YF55 |
Samsung semiconductor |
256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM |
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| 2 | K6F2008U2E-YF70 |
Samsung semiconductor |
256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM |
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| 3 | K6F2008V2E |
Samsung semiconductor |
256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM |
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| 4 | K6F2008V2E-LF55 |
Samsung semiconductor |
256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM |
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| 5 | K6F2008V2E-LF70 |
Samsung semiconductor |
256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM |
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