IXYX30N170CV1 - IXYS

IXYX30N170CV1 IGBT

High Voltage XPTTM IGBT w/ Diode Preliminary Technical Information IXYX30N170CV1 VCES = 1700V IC110 = 30A VCE(sat)  3.7V tfi(typ) = 107ns Symbol VCES VCGR VGES VGEM IC25 IC110 IF110 ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD FC Weight Test Conditions Maximum Ratings TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Continuous Transient 1700 1700 ±20.

Features

 High Voltage Package
 High Blocking Voltage
 Low Saturation Voltage Advantages
 Low Gate Drive Requirement
 High Power Density Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVCES IC = 250A, VGE = 0V VGE(th) IC = 250A, VCE = VGE ICES VCE = 0.8
• VCES, VGE = 0V TJ = 150C IGES VCE = 0V, VGE = 20V VCE(sat) IC = 30A, VGE = 15V, Note 1 TJ = 150C Characteristic Values Min. Typ. Max. 1700 V 3.0 5.0 V 25 A 5 mA 100 nA 3.0 3.7 V 4.1 V Applications
 Switch-Mode and Resonant-Mode Power Supplies
 Uninterruptible Power Supplies (UPS)
 Laser Ge.