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IXYX30N170CV1 |
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| Part Number | IXYX30N170CV1 |
| Manufacturer | IXYS |
| Description | High Voltage XPTTM IGBT w/ Diode Preliminary Technical Information IXYX30N170CV1 VCES = 1700V IC110 = 30A VCE(sat) 3.7V tfi(typ) = 107ns Symbol VCES VCGR VGES VGEM IC25 IC110 IF110 ICM SSOA (... |
| Features |
High Voltage Package High Blocking Voltage Low Saturation Voltage Advantages Low Gate Drive Requirement High Power Density Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVCES IC = 250A, VGE = 0V VGE(th) IC = 250A, VCE = VGE ICES VCE = 0.8 • VCES, VGE = 0V TJ = 150C IGES VCE = 0V, VGE = 20V VCE(sat) IC = 30A, VGE = 15V, Note 1 TJ = 150C Characteristic Values Min. Typ. Max. 1700 V 3.0 5.0 V 25 A 5 mA 100 nA 3.0 3.7 V 4.1 V Applications Switch-Mode and Resonant-Mode Power Supplies Uninterruptible Power Supplies (UPS) Laser Ge... |
| Document |
 IXYX30N170CV1 Data Sheet
PDF 199.01KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IXYX100N120B3 |
IXYS |
IGBT |
|
| 2 | IXYX100N120C3 |
IXYS |
IGBT |
|
| 3 | IXYX100N65B3D1 |
IXYS |
IGBT |
|
| 4 | IXYX100N65C3D1 |
IXYS |
IGBT |
|
| 5 | IXYX110N120C4 |
IXYS |
IGBT |
|