IXYX110N120C4 - IXYS

IXYX110N120C4 IGBT

1200V XPTTM Gen 4 IGBT High Speed IGBT for 20-50kHz Switching IXYX110N120C4 Symbol V CES V CGR VGES V GEM IC25 I LRMS I C110 ICM SSOA (RBSOA) PC T J TJM Tstg TL TSOLD FC Weight Test Conditions Maximum Ratings T = 25°C to 175°C J T J = 25°C to 175°C, R GE = 1M Continuous Transient 1200 V 1200 V ±20 V ±30 V TC= 25°C (Chip Capability) T.

Features

 Optimized for Low Switching Losses
 Positive Thermal Coefficient of Vce(sat)
 International Standard Package Advantages
 High Power Density
 Low Gate Drive Requirement Applications
 Power Inverters
 UPS
 Motor Drives
 SMPS
 PFC Circuits
 Battery Chargers
 Welding Machines
 Lamp Ballasts ©2021 Littelfuse, Inc. DS101059A(10/21) Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) gfs IC = 60A, VCE = 10V, Note 1 Cies Coes Cres VCE = 25V, VGE = 0V, f = 1MHz Qg(on) Qge Qgc IC = IC110, VGE = 15V, VCE = 0.5
• VCES td(on) tri Eon td(off) tfi Eoff Inductive load, TJ = .