IXYA15N65C3D1 - IXYS

IXYA15N65C3D1 IGBT

Preliminary Technical Information XPTTM 650V IGBT GenX3TM w/Diode IXYA15N65C3D1 IXYP15N65C3D1 Extreme Light Punch Through IGBT for 20-60kHz Switching VCES = 650V IC110 = 15A VCE(sat)  2.5V tfi(typ) = 28ns TO-263 AA (IXYA) Symbol VCES VCGR VGES VGEM IC25 IC110 IIFC1M10 IA EAS SSOA (RBSOA) tsc (SCSOA) PC TJ TJM Tstg TL TSOLD MFCd Weight Test Conditio.

Features

 Optimized for 20-60kHz Switching
 Square RBSOA
 Avalanche Rated
 Anti-Parallel Fast Diode
 Short Circuit Capability
 International Standard Packages Advantages
 High Power Density
 Extremely Rugged
 Low Gate Drive Requirement Applications
 Power Inverters
 UPS
 Motor Drives
 SMPS
 PFC Circuits
 Battery Chargers
 Welding Machines
 Lamp Ballasts
 High Frequency Power Inverters DS100575B(02/15) Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) gfs IC = 15A, VCE = 10V, Note 1 Cies Coes Cres VCE = 25V, VGE = 0V, f = 1MHz Qg(on) Qge Qgc IC = 15A, VGE = 15V, V.