IXYX120N120B3 - IXYS

IXYX120N120B3 IGBT

1200V XPTTM IGBT GenX3TM High-Speed IGBT for 10-30 kHz Switching Advance Technical Information IXYK120N120B3 IXYX120N120B3 VCES = 1200V IC110 = 120A VCE(sat)  2.2V tfi(typ) = 260ns TO-264P (IXYK) Symbol VCES VCGR VGES VGEM IC25 ILRMS IC110 ICM IA EAS SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions Maximum Ratings TJ = 25°C to 17.

Features

 Square RBSOA
 International Standard Packages
 Positive Thermal Coefficient of Vce(sat)
 Avalanche Rated
 High Current Handling Capability Advantages
 High Power Density
 Low Gate Drive Requirement Applications
 High Frequency Power Inverters
 UPS
 Motor Drives
 SMPS
 PFC Circuits
 Battery Chargers
 Welding Machines
 Lamp Ballasts © 2015 IXYS CORPORATION, All Rights Reserved DS100646(02/15) Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) gfs IC = 60A, VCE = 10V, Note 1 Cies Coes Cres VCE = 25V, VGE = 0V, f = 1MHz Qg(on) Qge Qgc IC = IC110, VGE = 15V, VC.