IXYX100N65B3D1 - IXYS

IXYX100N65B3D1 IGBT

Advance Technical Information XPTTM 650V IGBT GenX3TM w/ Diode IXYK100N65B3D1 IXYX100N65B3D1 Extreme Light Punch Through IGBT for 10-30kHz Switching VCES = IC110 = VCE(sat)  tfi(typ) = 650V 100A 1.85V 73ns TO-264 (IXYK) Symbol VCES VCGR VGES VGEM IC25 ILRMS IC110 IF110 ICM IA EAS SSOA (RBSOA) tsc (SCSOA) PC TJ TJM Tstg TL TSOLD Md FC Weight Test C.

Features

 International Standard Packages
 Optimized for 10-30kHz Switching
 Square RBSOA
 Avalanche Rated
 Short Circuit Capability
 Anti-Parallel Ultra Fast Diode
 High Current Handling Capability Advantages
 High Power Density
 Low Gate Drive Requirement Applications
 Power Inverters
 UPS
 Motor Drives
 SMPS
 PFC Circuits
 Battery Chargers
 Welding Machines
 Lamp Ballasts © 2014 IXYS CORPORATION, All Rights Reserved DS100633(10/14) Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) gfs IC = 60A, VCE = 10V, Note 1 Cies Coes Cres VCE = 25V, VGE = 0V, f = 1MHz Qg(o.