IXTT1N100 - IXYS Corporation

IXTT1N100 High-Voltage MOSFET

Advance Technical Information High Voltage MOSFET N-Channel Enhancement Mode Avalanche Energy Rated IXTH 1N100 IXTT 1N100 V DSS ID25 RDS(on) = 1000 V = 1.5 A = 11 Ω Symbol Test Conditions V DSS VDGR VGS VGSM ID25 I DM T J = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C T C = 25°C, pulse width limited by T JM.

Features

Ÿ International standard packages Ÿ High voltage, Low RDS (on) HDMOSTM process Ÿ Rugged polysilicon gate cell structure Ÿ Fast switching times Applications Ÿ Switch-mode and resonant-mode power supplies Ÿ Flyback inverters Ÿ DC choppers Ÿ High frequency matching Advantages Ÿ Space savings Ÿ High power density © 2002 IXYS All rights reserved 98886 (1/2) Symbol gfs Ciss Coss Crss t d(on) tr td(off) tf Q g(on) Qgs Qgd RthJC RthCK Test Conditions Characteristic Values (T J = 25°C, unless otherwise specified) min. typ. max. VDS = 20 V; ID = 1.0A, pulse test 0.8 1.5 S 480 pF VGS = .