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IXTT1N100 |
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| Part Number | IXTT1N100 |
| Manufacturer | IXYS Corporation |
| Description | Advance Technical Information High Voltage MOSFET N-Channel Enhancement Mode Avalanche Energy Rated IXTH 1N100 IXTT 1N100 V DSS ID25 RDS(on) = 1000 V = 1.5 A = 11 Ω Symbol Test Conditions V DSS... |
| Features |
International standard packages High voltage, Low RDS (on) HDMOSTM
process
Rugged polysilicon gate cell structure Fast switching times
Applications
Switch-mode and resonant-mode
power supplies
Flyback inverters DC choppers High frequency matching
Advantages
Space savings High power density
© 2002 IXYS All rights reserved
98886 (1/2)
Symbol
gfs Ciss Coss Crss t
d(on)
tr td(off) tf Q
g(on)
Qgs Qgd RthJC RthCK
Test Conditions
Characteristic Values
(T J
=
25°C,
unless
otherwise
specified)
min. typ. max.
VDS = 20 V; ID = 1.0A, pulse test
0.8 1.5
S
480
pF
VGS = ... |
| Document |
 IXTT1N100 Data Sheet
PDF 71.28KB |
| Distributor | Stock | Price | Buy |
|---|
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|---|---|---|---|---|
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