Preliminary Technical Information Depletion Mode MOSFET IXTH16N20D2 IXTT16N20D2 VDSX ID(on) RDS(on) = > ≤ 200V 16A 73mΩ N-Channel TO-247 (IXTH) Symbol VDSX VDGX VGSX VGSM PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C Maximum Ratings 200 200 ±20 ±30 695 - 55 ... +150 .
• Normally ON Mode
• International Standard Packages
• Molding Epoxies Meet UL 94 V-0 Flammability Classification Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSX VGS(off) IGSX IDSX(off) RDS(on) ID(on) VGS = - 5V, ID = 250μA VDS = 25V, ID = 4mA VGS = ±20V, VDS = 0V VDS = VDSX, VGS = - 5V VGS = 0V, ID = 8A, Note 1 VGS = 0V, VDS = 25V, Note 1 16 TJ = 125°C Characteristic Values Min. Typ. Max. 200 - 2.0 - 4.0 V V Advantages
• Easy to Mount
• Space Savings
• High Power Density Applications
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• Audio Amplifiers Start-up Circuits Protection Circuits Ramp Generators Curren.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IXTT16N10D2 |
IXYS |
Depletion Mode MOSFET | |
2 | IXTT16P60P |
IXYS |
Power MOSFET | |
3 | IXTT100N25P |
IXYS Corporation |
N-Channel MOSFET | |
4 | IXTT10P50 |
IXYS Corporation |
P-Channel MOSFET | |
5 | IXTT110N10L2 |
IXYS |
Power MOSFET | |
6 | IXTT110N10P |
IXYS Corporation |
N-Channel MOSFET | |
7 | IXTT11P50 |
IXYS Corporation |
P-Channel MOSFET | |
8 | IXTT120N15P |
IXYS |
Power MOSFET | |
9 | IXTT140N075L2HV |
IXYS |
Power MOSFET | |
10 | IXTT140N10P |
IXYS Corporation |
Power MOSFET | |
11 | IXTT170N10P |
IXYS |
Power MOSFET | |
12 | IXTT1N100 |
IXYS Corporation |
High-Voltage MOSFET |