IXTT110N10L2 - IXYS

IXTT110N10L2 Power MOSFET

Advance Technical Information LinearL2TM Power MOSFET w/ Extended FBSOA IXTH110N10L2 IXTT110N10L2 VDSS = 100V ID25 = 110A ≤ RDS(on) 18mΩ N-Channel Enhancement Mode Guaranteed FBSOA Avalanche Rated TO-247 (IXTH) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ .

Features

z Designed for Linear Operation z International Standard Packages z Avalanche Rated z Integrated Gate Resistor for Easy Paralleling z Guaranteed FBSOA at 75°C Advantages z Easy to Mount z Space Savings z High Power Density Applications z Solid State Circuit Breakers z Soft Start Controls z Linear Amplifiers z Programmable Loads z Current Regulators © 2010 IXYS CORPORATION, All Rights Reserved DS100235(01/10) Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) gfs VDS = 10V, ID = 0.5
• ID25, Note 1 Ciss Coss Crss VGS = 0V, VDS = 25V, f = 1MHz RGi Gate Input Resistance td(.