PolarHTTM Power MOSFET www.datasheet4u.com IXTQ 140N10P IXTT 140N10P VDSS ID25 RDS(on) = = ≤ 100 V 140 A 11 mΩ N-Channel Enhancement Mode Avalanche Rated Symbol VDSS VDGR VGS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ Continuous Transient TC = 25° C E.
l l 1.13/10 Nm/lb.in. 5.5 5.0 g g l International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Symbol Test Conditions (TJ = 25° C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 250µA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 175° C Characteristic Values Min. Typ. Max. 100 3.0 5.0 ±100 25 500 11 9 V V nA µA µA mΩ mΩ Advantages l l l Easy to mount Space savings High power density VGS = 10 V, ID = 0.5 ID25 VGS = 15 V, ID = 300 A Pulse test, t ≤300 µs, duty cycle.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IXTT140N075L2HV |
IXYS |
Power MOSFET | |
2 | IXTT100N25P |
IXYS Corporation |
N-Channel MOSFET | |
3 | IXTT10P50 |
IXYS Corporation |
P-Channel MOSFET | |
4 | IXTT110N10L2 |
IXYS |
Power MOSFET | |
5 | IXTT110N10P |
IXYS Corporation |
N-Channel MOSFET | |
6 | IXTT11P50 |
IXYS Corporation |
P-Channel MOSFET | |
7 | IXTT120N15P |
IXYS |
Power MOSFET | |
8 | IXTT16N10D2 |
IXYS |
Depletion Mode MOSFET | |
9 | IXTT16N20D2 |
IXYS |
Depletion Mode MOSFET | |
10 | IXTT16P60P |
IXYS |
Power MOSFET | |
11 | IXTT170N10P |
IXYS |
Power MOSFET | |
12 | IXTT1N100 |
IXYS Corporation |
High-Voltage MOSFET |