IXTT11P50 - IXYS Corporation

IXTT11P50 P-Channel MOSFET

Power MOSFETs P-Channel Enhancement Mode Avalanche Rated IXTH11P50 IXTT11P50 Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD TJ TJM Tstg TL Tsold Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C 1.6mm (0.062in.) from Case for 10s Plas.

Features

z International Standard Packages z Low RDS (on) HDMOSTM Process z Rugged Polysilicon Gate Cell Structure z Avalanche Rated z Low Package Inductance - Easy to Drive and to Protect Advantages z Easy to Mount z Space Savings z High Power Density © 2013 IXYS CORPORATION, All Rights Reserved DS94535L(01/13) Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) gfs VDS = -10V, ID = 0.5
• ID25, Note 1 Ciss Coss Crss VGS = 0V, VDS = - 25V, f = 1MHz td(on) tr td(off) tf Resistive Switching Times VGS = -10V, VDS = 0.5
• VDSS, ID = 0.5
• ID25 RG = 4.7Ω (External) Qg(on) Qgs Qgd VGS.