IXTK250N10 - IXYS Corporation

IXTK250N10 Power MOSFET

Advance Technical Information High Current MegaMOSTMFET N-Channel Enhancement Mode IXTK 250N10 VDSS ID25 RDS(on) = 100 V = 250 A = 5 mΩ Symbol VDSS VDGR VGS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1.0 MΩ Continuous Transient TC = 25°C MOSFET chip capability Externa.

Features

•Low RDS (on) HDMOSTM process
•Rugged polysilicon gate cell structure
•International standard package
•Fast switching times Applications
• Motor controls
• DC choppers
• Switched-mode power supplies
•DC-DC Converters
•Linear Regulators Advantages
• Easy to mount with one screw (isolated mounting screw hole)
• Space savings
• High power density Symbol Test Conditions (TJ = 25°C unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 1 mA V DS = VGS, ID = 250 µA V GS = ±20 V DC, VDS = 0 V DS = VDSS VGS = 0 V TJ = 25°C TJ = 125°C Characteristic Values Min. Typ. Max. 100 2.0 4.