IXTK200N10P - IXYS Corporation

IXTK200N10P Power MOSFET

PolarHTTM Power MOSFET IXTK 200N10P N-Channel Enhancement Mode Avalanche Rated V = 100 V DSS ID25 = 200 A RDS(on) ≤ 7.5 mΩ Symbol VDSS VDGR VGS VGSM ID25 ID(RMS) IDM I AR EAR E AS dv/dt PD TJ TJM Tstg TL T SOLD Md Weight Test Conditions TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ Continuous Transient TC = 25° C External lead current limit T.

Features

l International standard package l Unclamped Inductive Switching (UIS) rated l Low package inductance - easy to drive and to protect Advantages l Easy to mount l Space savings l High power density © 2006 IXYS All rights reserved DS99186E(10/05) IXTK 200N10P Symbol g fs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCS Test Conditions Characteristic Values (TJ = 25° C, unless otherwise specified) Min. Typ. Max. V = 10 V; I = 0.5 I , pulse test 60 97 S DS D D25 VGS = 0 V, VDS = 25 V, f = 1 MHz 7600 pF 2900 pF 860 pF VGS = 10 V, VDS = 0.5 VDSS, ID = 60 A RG = 3.3 .