isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 75V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 7mΩ(Max) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switch-Mode and Resonant-Mode Power Supplies ·DC-DC Converters ·AC and DC Motor Dr.
·Drain Source Voltage-
: VDSS= 75V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 7mΩ(Max)
·Fast Switching
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·Switch-Mode and Resonant-Mode Power Supplies
·DC-DC Converters
·AC and DC Motor Drives
·Robotics and Servo Controls
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
75
V
VGS
Gate-Source Voltage-Continuous
±20
V
ID
Drain Current-Continuous
240
A
IDM
Drain Current-Single Plused
720
A
PD
Total Dissipation.
Advance Technical Information LinearL2TM Power MOSFET w/Extended FBSOA N-Channel Enhancement Mode Avalanche Rated IXTK.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IXTK200N10L2 |
INCHANGE |
N-Channel MOSFET | |
2 | IXTK200N10L2 |
IXYS |
Power MOSFET | |
3 | IXTK200N10P |
IXYS Corporation |
Power MOSFET | |
4 | IXTK200N10P |
INCHANGE |
N-Channel MOSFET | |
5 | IXTK20N150 |
IXYS |
High Voltage Power MOSFETs | |
6 | IXTK21N100 |
IXYS Corporation |
Power MOSFET | |
7 | IXTK250N10 |
IXYS Corporation |
Power MOSFET | |
8 | IXTK250N10 |
INCHANGE |
N-Channel MOSFET | |
9 | IXTK100N25P |
IXYS Corporation |
N-Channel MOSFET | |
10 | IXTK102N30P |
IXYS Corporation |
PolarHT Power MOSFET | |
11 | IXTK102N30P |
INCHANGE |
N-Channel MOSFET | |
12 | IXTK102N65X2 |
IXYS |
Power MOSFET |