IXTK102N65X2 - IXYS

IXTK102N65X2 Power MOSFET

Preliminary Technical Information X2-Class Power MOSFET IXTK102N65X2 IXTX102N65X2 VDSS = ID25 = RDS(on)  650V 102A 30m N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264P (IXTK) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD dv/dt TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions Maximum Ratings TJ = 25C to 150C TJ = 25C to .

Features

 International Standard Packages
 Low QG
 Avalanche Rated
 Low Package Inductance Advantages
 High Power Density
 Easy to Mount
 Space Savings Applications
 Switch-Mode and Resonant-Mode Power Supplies
 DC-DC Converters
 PFC Circuits
 AC and DC Motor Drives
 Robotics and Servo Controls © 2015 IXYS CORPORATION, All Rights Reserved DS100655A(6/15) Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs VDS = 10V, ID = 0.5
• ID25, Note 1 RGi Gate Input Resistance Ciss Coss Crss VGS = 0V, VDS = 25V, f = 1MHz Co(er) Co(tr) Effective Output Capacitance Energy .