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Advance Technical Information Linear L2TM Power MOSFET w/ Extended FBSOA N-Channel Enhancement Mode Guaranteed FBSOA Avalanche Rated Symbol VDSS VDGR VGSS VGSM ID25 ILRMS IDM IA EAS PD TJ TJM Tstg TL TSOLD Md FC Weight 1.6mm (0.063 in.) from Case for 10s Plastic Body for 10s Mounting Torque (IXTK) Mounting Force (IXTX) TO-264 PLUS247 Test Conditions TJ = 25.
z z z G D S Tab TC = 25°C (Chip Capability) Lead Current Limit, (RMS) TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C PLUS247(IXTX) G D S Tab G = Gate S = Source D = Drain Tab = Drain Designed for Linear Operation Avalanche Rated Guaranteed FBSOA at 75°C Advantages z z z Easy to Mount Space Savings High Power Density Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 1mA VDS = VGS, ID = 3mA VGS = ±20V, VDS = 0V VDS = VDSS, VGS = 0V TJ = 125°C Characteristic Values Min. Typ. Max. 100 2.0 4.5 ±200 10 .
IXTK200N10L2 - INCHANGE
Isc N-Channel MOSFET Transistor IXTK200N10L2 ·FEATURES ·With To-3PL package ·Low input capacitance and gate charge ·Lo.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IXTK200N10P |
IXYS Corporation |
Power MOSFET |
|
| 2 | IXTK200N10P |
INCHANGE |
N-Channel MOSFET |
|
| 3 | IXTK20N150 |
IXYS |
High Voltage Power MOSFETs |
|
| 4 | IXTK21N100 |
IXYS Corporation |
Power MOSFET |
|
| 5 | IXTK240N075L2 |
INCHANGE |
N-Channel MOSFET |
|
| 6 | IXTK240N075L2 |
IXYS |
Power MOSFET |
|
| 7 | IXTK250N10 |
IXYS Corporation |
Power MOSFET |
|
| 8 | IXTK250N10 |
INCHANGE |
N-Channel MOSFET |
|
| 9 | IXTK100N25P |
IXYS Corporation |
N-Channel MOSFET |
|
| 10 | IXTK102N30P |
IXYS Corporation |
PolarHT Power MOSFET |
|
| 11 | IXTK102N30P |
INCHANGE |
N-Channel MOSFET |
|
| 12 | IXTK102N65X2 |
IXYS |
Power MOSFET |
|