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IXTK250N10 |
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| Part Number | IXTK250N10 |
| Manufacturer | IXYS Corporation |
| Description | Advance Technical Information High Current MegaMOSTMFET N-Channel Enhancement Mode IXTK 250N10 VDSS ID25 RDS(on) = 100 V = 250 A = 5 mΩ Symbol VDSS VDGR VGS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/d... |
| Features |
•Low RDS (on) HDMOSTM process •Rugged polysilicon gate cell structure •International standard package •Fast switching times Applications • Motor controls • DC choppers • Switched-mode power supplies •DC-DC Converters •Linear Regulators Advantages • Easy to mount with one screw (isolated mounting screw hole) • Space savings • High power density Symbol Test Conditions (TJ = 25°C unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 1 mA V DS = VGS, ID = 250 µA V GS = ±20 V DC, VDS = 0 V DS = VDSS VGS = 0 V TJ = 25°C TJ = 125°C Characteristic Values Min. Typ. Max. 100 2.0 4... |
| Document |
 IXTK250N10 Data Sheet
PDF 69.30KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IXTK250N10 |
INCHANGE |
N-Channel MOSFET |
|
| 2 | IXTK200N10L2 |
INCHANGE |
N-Channel MOSFET |
|
| 3 | IXTK200N10L2 |
IXYS |
Power MOSFET |
|
| 4 | IXTK200N10P |
IXYS Corporation |
Power MOSFET |
|
| 5 | IXTK200N10P |
INCHANGE |
N-Channel MOSFET |
|