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IXTK200N10P |
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| Part Number | IXTK200N10P |
| Manufacturer | IXYS Corporation |
| Description | PolarHTTM Power MOSFET IXTK 200N10P N-Channel Enhancement Mode Avalanche Rated V = 100 V DSS ID25 = 200 A RDS(on) ≤ 7.5 mΩ Symbol VDSS VDGR VGS VGSM ID25 ID(RMS) IDM I AR EAR E AS dv/dt PD TJ TJM ... |
| Features |
l International standard package l Unclamped Inductive Switching (UIS)
rated l Low package inductance
- easy to drive and to protect
Advantages
l Easy to mount l Space savings l High power density
© 2006 IXYS All rights reserved
DS99186E(10/05)
IXTK 200N10P
Symbol
g fs
Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCS
Test Conditions
Characteristic Values
(TJ = 25° C, unless otherwise specified) Min. Typ. Max.
V = 10 V; I = 0.5 I , pulse test
60 97
S
DS
D
D25
VGS = 0 V, VDS = 25 V, f = 1 MHz
7600
pF
2900
pF
860
pF
VGS = 10 V, VDS = 0.5 VDSS, ID = 60 A RG = 3.3 ... |
| Document |
 IXTK200N10P Data Sheet
PDF 203.99KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IXTK200N10L2 |
INCHANGE |
N-Channel MOSFET |
|
| 2 | IXTK200N10L2 |
IXYS |
Power MOSFET |
|
| 3 | IXTK200N10P |
INCHANGE |
N-Channel MOSFET |
|
| 4 | IXTK20N150 |
IXYS |
High Voltage Power MOSFETs |
|
| 5 | IXTK21N100 |
IXYS Corporation |
Power MOSFET |
|