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IXTK200N10L2 |
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| Part Number | IXTK200N10L2 |
| Manufacturer | INCHANGE |
| Description | Isc N-Channel MOSFET Transistor IXTK200N10L2 ·FEATURES ·With To-3PL package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations fo... |
| Features |
·With To-3PL package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGSS Gate-Source Voltage ±30 ID Drain Current-Continuous 200 IDM Drain Current-Single Pulsed 500 PD Total Dissipation @TC=25℃ 1040 Tch Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS S... |
| Document |
 IXTK200N10L2 Data Sheet
PDF 194.85KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IXTK200N10L2 |
IXYS |
Power MOSFET |
|
| 2 | IXTK200N10P |
IXYS Corporation |
Power MOSFET |
|
| 3 | IXTK200N10P |
INCHANGE |
N-Channel MOSFET |
|
| 4 | IXTK20N150 |
IXYS |
High Voltage Power MOSFETs |
|
| 5 | IXTK21N100 |
IXYS Corporation |
Power MOSFET |
|