IXTK140N20P - IXYS Corporation

IXTK140N20P Power MOSFET

PolarHTTM Power MOSFET IXTK 140N20P N-Channel Enhancement Mode Avalanche Rated VDSS = 200 V ID25 = 140 A ≤RDS(on) 18 mΩ Symbol Test Conditions Maximum Ratings TO-264 (IXTK) VDSS VDGR VGS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ Continuous Transient TC = 25° C Exter.

Features

l International standard package l Unclamped Inductive Switching (UIS) rated l Low package inductance - easy to drive and to protect Advantages l Easy to mount l Space savings l High power density © 2006 IXYS All rights reserved DS99194E(12/05) IXTK 140N20P Symbol gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK Test Conditions Characteristic Values (TJ = 25° C, unless otherwise specified) Min. Typ. Max. VDS= 10 V; ID = 0.5 ID25, pulse test 50 84 S VGS = 0 V, VDS = 25 V, f = 1 MHz 7500 1800 280 pF pF pF VGS = 10 V, VDS = 0.5 VDSS, ID = 60 A RG = 3.3 Ω (External) .