IXTK128N15 - IXYS Corporation

IXTK128N15 Power MOSFET

Advance Technical Information www.DataSheet4U.com High Current Mega MOSTMFET N-Channel Enhancement Mode IXTK 128N15 VDSS ID25 RDS(on) = 150 V = 128 A = 15 mΩ Symbol VDSS VDGR VGS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C MOSFET chi.

Features

W °C °C °C °C International standard package Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Fast switching times Applications Motor controls DC choppers Switched-mode power supplies Advantages 1.6 mm (0.062 in.) from case for 10 s Mounting torque TO-264 300 0.7/6 Nm/lb.in. 10 g Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 1 mA VDS = VGS, ID = 250 µA VGS = ±20 V DC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 25°C TJ = 125°C Characteristic Values Min. Typ. Max. 150 2.0 4.0 ±100 50 2 15 V V nA µA mA mΩ Easy to moun.