IXTK110N20L2 - INCHANGE

IXTK110N20L2 N-Channel MOSFET

Isc N-Channel MOSFET Transistor INCHANGE Semiconductor IXTK110N20L2 ·FEATURES ·With TO-3PL package ·Low input capacitance and gate charge ·High speed switching ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·Load switch ·Power manag.

Features

·With TO-3PL package
·Low input capacitance and gate charge
·High speed switching
·Low gate input resistance
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device performance and reliable operation
·APPLICATIONS
·Switching applications
·Load switch
·Power management
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 200 VGSS Gate-Source Voltage ±30 ID Drain Current-Continuous 110 IDM Drain Current-Single Pulsed 275 PD Total Dissipation @TC=25℃ 960 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~.