IXTK120N20P - IXYS

IXTK120N20P PolarHT Power MOSFET

PolarHTTM Power MOSFET IXTK 120N20P IXTQ 120N20P N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 200 V 120 A 22 m Ω TO-264 (IXTK) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ 200 V 200 V VGS VGSM Continuous Transient ±20 V ±30 V ID25 ID(RMS) IDM I AR EAR E AS T.

Features

l International standard packages l Unclamped Inductive Switching (UIS) rated l Low package inductance - easy to drive and to protect Advantages l Easy to mount l Space savings l High power density © 2006 IXYS All rights reserved DS99207E(10/05) Symbol g fs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCS RthCS Test Conditions Characteristic Values (TJ = 25° C, unless otherwise specified) Min. Typ. Max. V = 10 V; I = 0.5 I , pulse test 40 63 S DS D D25 VGS = 0 V, VDS = 25 V, f = 1 MHz 6000 pF 1300 pF 265 pF VGS = 10 V, VDS = 0.5 VDSS, ID = ID25 RG = 3.3 Ω (Exte.