IXTK120N25 - IXYS Corporation

IXTK120N25 Power MOSFET

High Current MegaMOSTMFET N-Channel Enhancement Mode Preliminary Data Sheet IXTK 120N25 VDSS = ID25 = = RDS(on) 250 V 120 A 20 mΩ Symbol Test conditions VDSS VDGR VGS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1.0 MΩ Continuous Transient TC = 25°C MOSFET chip capability External l.

Features

•Low RDS (on) HDMOSTM process
•Rugged polysilicon gate cell structure
•International standard package
•Fast switching times Symbol Test Conditions (TJ = 25°C unless otherwise specified) VDSS VGS = 0 V, ID = 1 mA VGS(th) VDS = VGS, ID = 250 µA IGSS VGS = ±20 V DC, VDS = 0 IDSS VDS = VDSS VGS = 0 V TJ = 25°C TJ = 125°C RDS(on) VPuGSlse=te1s0t,Vt,≤ID3=000.m5 sID,2d5 uty cycle d ≤ 2% Characteristic Values Min. Typ. Max. 250 V 2.0 4.0 V ±200 nA 50 µA 3 mA 20 mΩ Applications
• Motorcontrols
• DC choppers
• Switched-mode power supplies Advantages
• Easy to mount with one screw .