IXTH60N15 - IXYS

IXTH60N15 Power MOSFET

Advance Technical Information Standard Power MOSFET N-Channel Enhancement Mode IXTH 60N15 VDSS = 150 V ID (cont) = 60 A RDS(on) = 33 mΩ Symbol Test Conditions VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg Md Weight TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = .

Features

z International standard package JEDEC TO-247 AD z Low RDS (on) HDMOSTM process z Rugged polysilicon gate cell structure z High commutating dv/dt rating z Fast switching times Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 250 µA VGS = ±20 V DC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125°C VGS = 10 V, ID = 15 A Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 150 2.0 V 4.0 V ±100 nA 25 µA 250 µA 33 m Ω Applications z Switch-mode and resonant-mode power supplies z Motor con.