IXTH64N10L2 - IXYS

IXTH64N10L2 Power MOSFET

Preliminary Technical Information LinearL2TM Power MOSFET w/Extended FBSOA IXTA64N10L2 IXTP64N10L2 IXTH64N10L2 VDSS = 100V ID25 = 64A  RDS(on) 32m N-Channel Enhancement Mode Guaranteed FBSOA Avalanche Rated Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD TJ TJM Tstg TL TSOLD FC Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M .

Features

 Designed for Linear Operation
 International Standard Packages
 Avalanche Rated
 Guaranteed FBSOA at 75C Advantages
 Easy to Mount
 Space Savings
 High Power Density Applications
 Solid State Circuit Breakers
 Soft Start Controls
 Linear Amplifiers
 Programmable Loads
 Current Regulators © 2018 IXYS CORPORATION, All Rights Reserved DS100557A(11/18) Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs VDS = 10V, ID = 0.5
• ID25, Note 1 Ciss Coss Crss VGS = 0V, VDS = 25V, f = 1MHz RGi Integrated Gate Input Resistor td(on) tr td(off) tf Resistive Switching.