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IXTH60N15 |
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| Part Number | IXTH60N15 |
| Manufacturer | IXYS |
| Description | Advance Technical Information Standard Power MOSFET N-Channel Enhancement Mode IXTH 60N15 VDSS = 150 V ID (cont) = 60 A RDS(on) = 33 mΩ Symbol Test Conditions VDSS VDGR VGS VGSM ID25 IDM IAR EAR ... |
| Features |
z International standard package JEDEC TO-247 AD
z Low RDS (on) HDMOSTM process z Rugged polysilicon gate cell structure z High commutating dv/dt rating z Fast switching times
Symbol Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified)
min. typ. max.
VDSS VGS(th) IGSS IDSS
RDS(on)
VGS = 0 V, ID = 250 µA VDS = VGS, ID = 250 µA
VGS = ±20 V DC, VDS = 0
VDS = VDSS VGS = 0 V
TJ = 125°C
VGS = 10 V, ID = 15 A Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
150 2.0
V 4.0 V
±100 nA
25 µA 250 µA
33 m Ω
Applications
z Switch-mode and resonant-mode power supplies
z Motor con... |
| Document |
 IXTH60N15 Data Sheet
PDF 95.35KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IXTH60N15 |
INCHANGE |
N-Channel MOSFET |
|
| 2 | IXTH60N20L2 |
IXYS |
Power MOSFET |
|
| 3 | IXTH60N20L2 |
INCHANGE |
N-Channel MOSFET |
|
| 4 | IXTH62N65X2 |
INCHANGE |
N-Channel MOSFET |
|
| 5 | IXTH62N65X2 |
IXYS |
Power MOSFET |
|