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Isc N-Channel MOSFET Transistor INCHANGE Semiconductor IXTH64N65X ·FEATURES ·With TO-247 package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAME.
·With TO-247 package
·Low input capacitance and gate charge
·Low gate input resistance
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
650
VGSS
Gate-Source Voltage
±30
ID
Drain Current-Continuous
64
IDM
Drain Current-Single Pulsed
125
PD
Total Dissipation @TC=25℃
890
Tch
Max. Operating Junction Temperature
150
Tstg
Storage Temperature
-55~150
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYM.
IXTH64N65X - IXYS
Preliminary Technical Information X-Class Power MOSFET N-Channel Enhancement Mode IXTH64N65X VDSS = ID25 = RDS(on) .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IXTH64N10L2 |
IXYS |
Power MOSFET |
|
| 2 | IXTH64N10L2 |
INCHANGE |
N-Channel MOSFET |
|
| 3 | IXTH60N15 |
INCHANGE |
N-Channel MOSFET |
|
| 4 | IXTH60N15 |
IXYS |
Power MOSFET |
|
| 5 | IXTH60N20L2 |
IXYS |
Power MOSFET |
|
| 6 | IXTH60N20L2 |
INCHANGE |
N-Channel MOSFET |
|
| 7 | IXTH62N65X2 |
INCHANGE |
N-Channel MOSFET |
|
| 8 | IXTH62N65X2 |
IXYS |
Power MOSFET |
|
| 9 | IXTH67N10 |
IXYS Corporation |
N-Channel MOSFET |
|
| 10 | IXTH67N10 |
INCHANGE |
N-Channel MOSFET |
|
| 11 | IXTH68N20 |
IXYS Corporation |
Power MOSFET |
|
| 12 | IXTH6N100D2 |
IXYS |
N-Channel MOSFET |
|