IXTH60N15 |
Part Number | IXTH60N15 |
Manufacturer | INCHANGE |
Description | isc N-Channel MOSFET Transistor ·FEATURES ·With TO-247 packaging ·With low gate drive requirements ·Easy to drive ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance an... |
Features |
·With TO-247 packaging ·With low gate drive requirements ·Easy to drive ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 150 VGSS Gate-Source Voltage ±30 ID Drain Current-Continuous 60 IDM Drain Current-Single Pulsed 240 PD Total Dissipation 275 Tj Operating Junction Temperature -55~150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c... |
Document |
IXTH60N15 Data Sheet
PDF 254.68KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | IXTH60N15 |
IXYS |
Power MOSFET | |
2 | IXTH60N20L2 |
IXYS |
Power MOSFET | |
3 | IXTH60N20L2 |
INCHANGE |
N-Channel MOSFET | |
4 | IXTH62N65X2 |
INCHANGE |
N-Channel MOSFET | |
5 | IXTH62N65X2 |
IXYS |
Power MOSFET |