Depletion Mode MOSFET N-Channel IXTA6N100D2 IXTP6N100D2 IXTH6N100D2 D VDSX = ID(on) > RDS(on) 1000V 6A 2.2 TO-263 AA (IXTA) G S G S D (Tab) TO-220AB (IXTP) Symbol VDSX VGSX VGSM PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C Continuous Transient TC = 25C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for .
• Normally ON Mode
• International Standard Packages
• Molding Epoxies Meet UL 94 V-0
Flammability Classification
Advantages
• Easy to Mount
• Space Savings
• High Power Density
Applications
• Audio Amplifiers
• Start-Up Circuits
• Protection Circuits
• Ramp Generators
• Current Regulators
• Active Loads
© 2017 IXYS CORPORATION, All Rights Reserved
DS100183C(4/17)
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
gfs
VDS = 30V, ID = 3A, Note 1
Ciss Coss Crss
VGS = -10V, VDS = 25V, f = 1MHz
td(on) tr td(off) tf
Resistive Switching Times VGS = 5V, VDS = 500V, ID = 3A RG.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IXTH6N120 |
IXYS Corporation |
High Voltage Power MOSFET | |
2 | IXTH6N50D2 |
IXYS Corporation |
N-Channel MOSFET | |
3 | IXTH6N80 |
IXYS |
Power MOSFET | |
4 | IXTH6N80 |
INCHANGE |
N-Channel MOSFET | |
5 | IXTH6N80A |
IXYS |
Power MOSFET | |
6 | IXTH6N80A |
INCHANGE |
N-Channel MOSFET | |
7 | IXTH6N90 |
IXYS Corporation |
Standard Power MOSFET | |
8 | IXTH6N90 |
INCHANGE |
N-Channel MOSFET | |
9 | IXTH6N90A |
IXYS Corporation |
Standard Power MOSFET | |
10 | IXTH6N90A |
INCHANGE |
N-Channel MOSFET | |
11 | IXTH60N15 |
INCHANGE |
N-Channel MOSFET | |
12 | IXTH60N15 |
IXYS |
Power MOSFET |