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IXTH12N120 |
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| Part Number | IXTH12N120 |
| Manufacturer | IXYS |
| Description | Power MOSFET, Avalanche Rated High Voltage Preliminary Data Sheet IXTH 12N120 VDSS = 1200 V ID (cont) = 12 A RDS(on)= 1.4 Ω Symbol Test Conditions VDSS VDGR VGS VGSM ID25 IDM IAR EEAARS PD TJ T... |
| Features |
z International standard package JEDEC TO-247 AD
z Low RDS (on) HDMOSTM process z Rugged polysilicon gate cell structure z Fast switching times
Symbol
VDSS VGS(th) IGSS IDSS
RDS(on)
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified)
min. typ. max.
VGS = 0 V, ID = 1 mA VDS = VGS, ID = 250 µA
1200 3
VGS = ±30 VDC, VDS = 0
VVGDSS
= =
0VDVSS
TTJJ
= =
25°C 125°C
PVGuSlse=
10 V, test, t
ID ≤
3=000.5µ •s,IDd25uty cycle d ≤ 2 % V 5V ±100 nA 25 µA 3 mA 1.4 Ω Applications z Switch-mode and resonant-mode power supplies z Motor controls z Uninterruptible Po... |
| Document |
 IXTH12N120 Data Sheet
PDF 541.56KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IXTH12N100 |
IXYS Corporation |
MOSFET |
|
| 2 | IXTH12N65X2 |
IXYS |
Power MOSFET |
|
| 3 | IXTH12N65X2 |
INCHANGE |
N-Channel MOSFET |
|
| 4 | IXTH12N70X2 |
IXYS |
Power MOSFET |
|
| 5 | IXTH12N70X2 |
INCHANGE |
N-Channel MOSFET |
|