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IXTH102N20T |
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| Part Number | IXTH102N20T |
| Manufacturer | IXYS |
| Description | Preliminary Technical Information TrenchHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH102N20T IXTQ102N20T IXTV102N20T VDSS = ID25 = RDS(on) ≤ 200 102 23 V A mΩ Symbol VDSS VGS... |
| Features |
z Unclamped Inductive Switching (UIS)
rated z Low package inductance
- easy to drive and to protect z 175 °C Operating Temperature
Advantages z Easy to mount z Space savings z High power density
© 2007 IXYS CORPORATION, All rights reserved
DS99821 (04/07)
IXTH102N20T IXTQ102N20T IXTV102N20T
Symbol
Test Conditions
(T = 25°C unless otherwise specified) J
gfs VDS= 10 V; ID = 0.5 ID25, Note 1
C iss
C oss
Crss
V = 0 V, V = 25 V, f = 1 MHz GS DS
td(on) tr td(off) tf
Resistive Switching Times
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 RG = 2.5 Ω (External)
Qg(on) Qgs Qgd
VGS= 10 V, VDS = ... |
| Document |
 IXTH102N20T Data Sheet
PDF 172.64KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IXTH102N20T |
INCHANGE |
N-Channel MOSFET |
|
| 2 | IXTH102N15T |
IXYS |
Power MOSFET |
|
| 3 | IXTH102N15T |
INCHANGE |
N-Channel MOSFET |
|
| 4 | IXTH10N100 |
IXYS Corporation |
MOSFET |
|
| 5 | IXTH10P50 |
IXYS Corporation |
P-Channel MOSFET |
|