IXTA98N075T - IXYS Corporation

IXTA98N075T Power MOSFET

Advance Technical Information TrenchMVTM Power MOSFET IXTA98N075T IXTP98N075T N-Channel Enhancement Mode VDSS = ID25 = RDS(on) ≤ 75 V 98 A 10 mΩ Symbol VDSS VDGR VGSM I D25 ILRMS IDM dv/dt IAR E AS Pd TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Transient T C = 25°C Package Current Limit (RMS): .

Features

Ultra-low On Resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 175 °C Operating Temperature Advantages Easy to mount Space savings High power density Applications Automotive - Motor Drives - 42V Power Bus - ABS Systems DC/DC Converters and Off-line UPS Primary Switch for 24V and 48V Systems High Current Switching Applications © 2007 IXYS CORPORATION, All rights reserved DS99541(04/07) IXTA98N075T IXTP98N075T Symbol Test Conditions (TJ = 25°C unless otherwise specified) gfs VDS= 10 V; ID = 0.5 ID25, Note 1 C iss C oss Crss V = 0 .