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isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 8.4mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·DC/DC Converters ·High Current Switching Applications ·ABSOLUTE MAXIMUM RATINGS(Ta=.
·Static drain-source on-resistance:
RDS(on) ≤ 8.4mΩ@VGS=10V
·Fully characterized avalanche voltage and current
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATION
·DC/DC Converters
·High Current Switching Applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
55
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
90
IDM
Drain Current-Single Pulsed
230
PD
Total Dissipation @TC=25℃
150
Tj
Operating Junction Temperature
-55~175
Tstg
Storage Temperature
-55~175.
IXTA90N055T2 - IXYS
TrenchT2TM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated IXTY90N055T2 IXTA90N055T2 IXTP90N055T2 Symbol VDSS.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IXTA90N055T |
IXYS Corporation |
Power MOSFET |
|
| 2 | IXTA90N055T |
INCHANGE |
N-Channel MOSFET |
|
| 3 | IXTA90N075T2 |
IXYS |
Power MOSFET |
|
| 4 | IXTA90N075T2 |
INCHANGE |
N-Channel MOSFET |
|
| 5 | IXTA90N15T |
INCHANGE |
N-Channel MOSFET |
|
| 6 | IXTA90N15T |
IXYS |
Power MOSFET |
|
| 7 | IXTA96N25T |
INCHANGE |
N-Channel MOSFET |
|
| 8 | IXTA96P085T |
IXYS |
Power MOSFET |
|
| 9 | IXTA98N075T |
IXYS Corporation |
Power MOSFET |
|
| 10 | IXTA98N075T |
INCHANGE |
N-Channel MOSFET |
|
| 11 | IXTA02N250 |
IXYS |
High Voltage Power MOSFET |
|
| 12 | IXTA02N450HV |
IXYS |
High Voltage Power MOSFETs |
|