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Preliminary Technical Information Trench Gate Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA90N15T IXTH90N15T IXTP90N15T IXTQ90N15T VDSS = ID25 = RDS(on) ≤ 150V 90A 20mΩ Symbol VDSS VDGR VGSM ID25 ILRMS IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions Maximum Ratings TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ .
z International standard packages z Unclamped Inductive Switching (UIS)
rated z Low package inductance
- easy to drive and to protect
Applications
z DC-DC converters z Battery chargers z Switched-mode and resonant-mode
power supplies z DC choppers z AC motor control z Uninterruptible power supplies
© 2007 IXYS CORPORATION, All rights reserved
DS99857(08/07)
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
gfs
Ciss Coss Crss
VDS= 10V, ID = 0.5
• ID25, Note 1 VGS = 0V, VDS = 25V, f = 1MHz
td(on) tr td(off) tf
Qg(on) Qgs Qgd
Resistive Switching Times VGS = 15V, VDS = 0.5
• .
IXTA90N15T - INCHANGE
isc N-Channel MOSFET Transistor IXTA90N15T ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 20mΩ@VGS=10V ·Fully.
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